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| SMD Type NPN Silicon Epitaxial Transistor 2SD1899-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features Low VCE(sat). +0.2 9.70 -0.2 High hFE. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector Current (pulse) *1 Base current Total power dissipation Ta = 25 Total power dissipation TC = 25 Junction temperature Storage temperature *1 Pulse Test PW 10ms, Duty Cycle 50%. Symbol VCBO VCEO VEBO IC ICP IB PT *2 PT Tj Tstg Rating 60 60 7 3 5 0.5 2 10 150 -55 to +150 Unit V V V A A A W W *2 Mounted on ceramic substrate of 7.5mm2x0.7mm 3.80 www.kexin.com.cn 1 SMD Type 2SD1899-Z Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Symbol ICBO IEBO Testconditons VCB = 60 V, IE = 0 VEB = 7 V, IC = 0 VCE = 2V, IC = 0.2 A DC current gain * hFE VCE = 2V, IC = 0.6 A VCE = 2V, IC = 2.0 A Collector saturation voltage * Base saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Fall time * Pulsed: PW 350 is, duty cycle 2% VCE(sat) IC = 1.5 A, IB = 0.15 A VBE(sat) IC = 1.5 A, IB = 0.15 A fT Cob ton tstg tf VCE = 5 V, IE = -1.5 A VCB = 10 V, IE = 0, f = 1.0 MHz IC = 1 A,VCC = 10 V IB1=-IB2=0.1A RL=10U Transistors Min Typ Max 10 10 Unit is iA 60 100 50 0.14 0.93 120 30 0.15 0.75 0.2 0.5 2 0.5 0.25 1.2 V V MHz pF is is is 400 hFE Classification Marking hFE M 100 200 L 160 320 K 200 400 2 www.kexin.com.cn |
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